Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings to +150 Unit mW �C
G High-speed switching G Small drive current owing to high input inpedance G High electrostatic breakdown voltage
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VOH VOL + R2*1 Coss ton*2 toff
Input capacitance (Common Source) Ciss Output capacitance (Common Source) VDS = 10V, VGS = 1MHz VDD = 5V, VGS = 200 VDD = 5V, VGS = 200 Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time
Resistance ratio = 1/50 Pulse measurement Note) The part number in the parenthesis shows conventional part number.Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF)
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