Homedatasheet30A02S

30A02S Datasheet

Low-frequency Audio Amplifier, Package : SMCP
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Description

Features, Applications

Applications
Low-frequency Amplifier, high-speed switching, small motor drive.
Features
Specifications

Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass epoxy board (20!30!1.6mm) Conditions Ratings to +150 Unit mW �C

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions IC=--200mA, IB=--10mA Ratings min typ max MHz mV V Unit nA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=580m[IC=0.7A, IB=35mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron).

Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IE=0 IC=--1mA, RBE= IE=--10�A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min typ max Unit V ns







Features

Parameters


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