Homedatasheet30N60B

30N60B Datasheet

Low Voltage < 600 Volts
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Features, Applications

Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg

Test Conditions to 150�C; RGE 1 MW Continuous Transient 1 ms VGE 15 V, TVJ 33 W Clamped inductive load, = 25�C

Maximum lead temperature for soldering mm (0.062 in.) from case for s Md Weight Mounting torque (M3)

Features International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) High power density Suitable for surface mounting Switching speed for high frequency applications Easy to mount with 1 screw,TO-247 (isolated mounting screw hole)

Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. 5 V %/K V %/K nA V

= 250 mA, VGE 0 V BVCES temperature coefficient = 250 mA, VCE = VGE VGE(th) temperature coefficient VCE = 0.8 VCES VGE 0 V VCE 0 V, VGE = IC110, VGE = IC110, VGE = 150�C

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. 25 2700 VCE 25 V, VGE = 1 MHz = IC110, VGE 15 V, VCE = 0.5 VCES Inductive load, = IC110, VGE = 100 mH, VCE = 0.8 VCES, RG = Roff 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, = IC110, VGE 100 mH VCE = 0.8 VCES, RG = Roff 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased mJ 0.62 K/W (IXGH30N60B) 0.25 K/W

gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

Features

Parameters

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