48F4268 Datasheet

Transistor MOSFET To-220


Features, Applications

This advanced high�cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain�to�source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Source�to�Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature

Rating Drain�to�Source Voltage Drain�to�Gate Voltage (RGS 1.0 M) Gate�to�Source Voltage Continuous Non�Repetitive (tp 10 ms) Drain Current Continuous @ 100�C Single Pulse (tp 10 �s) Total Power Dissipation Derate above 25�C Operating and Storage Temperature Range Single Pulse Drain�to�Source Avalanche Energy Starting = 25�C (VDD = 25 Vdc, VGS = 10 Vdc, Peak = 75 Apk, = 0.1 mH, 25 ) Thermal Resistance Junction�to�Case Junction�to�Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 5.0 seconds Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EAS 280 RJC RJA 62.5 260 �C/W �C Value to 150 Unit Vdc Vpk Adc Apk Watts W/�C �C mJ

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Motorola TMOS � Motorola, Inc. 1997 Power MOSFET Transistor Device Data

Characteristic OFF CHARACTERISTICS Drain�to�Source Breakdown Voltage (VGS = 0 Vdc, = 0.25 mAdc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, = 125�C) Gate�Body Leakage Current (VGS � 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, = 250 �Adc) Static Drain�to�Source On�Resistance (VGS = 10 Vdc, = 38 Adc) (VGS = 5.0 Vdc, = 38 Adc) Drain�to�Source On�Voltage (VGS = 10 Vdc, = 75 Adc) (VGS = 10 Vdc, = 38 Adc, = 150�C) Forward Transconductance (VDS = 3.0 Vdc, = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn�On Delay Time Rise Time Turn�Off Delay Time Fall Time Gate Charge = 75 Adc, = 24 Vdc, (V VGS = 5.0 Vdc) (VDD = 15 Vdc, = 75 Adc, Ad VGS Vdc, Vdc 4.7 ) td(on) tr td(off) Q2 Q3 SOURCE�DRAIN DIODE CHARACTERISTICS Forward On�Voltage (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, = 125�C) Reverse Recovery Time (IS = 20 Adc, Ad , VGS = 0 Vdc, , ( dIS/dt = 100 A/�s) Reverse Recovery Stored Charge (1) Pulse Test: Pulse Width 300 �s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. trr ta tb QRR VSD �C ns Vdc nC ns (VDS = 25 Vdc, Vdc VGS = 0 Vdc, Vdc = 1.0 MHz) Ciss Coss Crss pF VGS(th) 1.0 RDS(on) VDS(on) gFS mhos mW Vdc V(BR)DSS 30 IDSS IGSS 10 100 nAdc �Adc Vdc Symbol Min Typ Max Unit

Motorola TMOS Power MOSFET Transistor Device Data
Figure 3. On�Resistance versus Drain Current and Temperature
Figure 4. On�Resistance versus Drain Current and Gate Voltage
Figure 6. Drain�To�Source Leakage Current versus Voltage



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