Homedatasheet48N50

48N50 Datasheet

N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low Trr: 500v, 48a
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Description

Features, Applications
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol

Test Conditions to 150�C; RGS 1 M Continuous Transient = 25�C, pulse width limited by TJM 25�C IS IDM, di/dt 100 A/�s, VDD VDSS, 44N50 48N50

Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. �A mA

Features International standard packages Molding epoxies meet 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOSTM process Unclamped Inductive Switching (UIS) rated Fast intrinsic rectifier

Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls

Advantages Easy to mount Space savings High power density
IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. VGS 10 V, VDS = 0.5 VDSS, TO-264 AA miniBLOC, SOT-227 B miniBLOC, ns nC K/W

gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK
Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. A V

Repetitive; pulse width limited by TJM 100 A, VGS 0 V, Pulse test, t 300 �s, duty cycle IF = IS, -di/dt = 100 A/�s, 100 V TBD 20

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Fig. 1 Output Characteristics Fig. 2 Input Admittance

Fig. 4 Temperature Dependence of Drain to Source Resistance
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage

Features

Parameters

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Manufacturer information

IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs

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