4AC12 Datasheet

Silicon NPN Epitaxial


Features, Applications

Absolute Maximum Ratings (for each device, = 25�C)

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Diode current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC *

PC * (TC = 25�C) Junction temperature Storage temperature Note: 1. 4 devices operation. Tj Tstg

Item Symbol Min Typ Max V Unit V �A Test conditions mA, = 20 mH, RBE mA, = 0 VCB = 0 VCE 20 V, RBE = VCE 0.5 A VCE 2 A Collector to emitter breakdown V(BR)CBO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage to E diode forward current Note: 1. Pulse test. VCE(sat) VBE(sat) VD

Maximum Collector Dissipation Curve 6 Collector power dissipation PC (W) 4 device operation 30 Collector power dissipation PC (W) 3 device operation 4 2 device operation 1 device operation 2 4 device operation 3 device operation 20 2 device operation Maximum Collector Dissipation Curve

Note: Collector power dissipation of each devices is identical.



Manufacturer information

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