Homedatasheet4N25

4N25 Datasheet

6-pin Dip Optoisolators Transistor Output
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Description

Features, Applications
Agilent 4N25 Phototransistor Optocoupler General Purpose Type

Description The is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a phototransistor. It is packaged a 6-pin DIP package and available in widelead spacing option and lead bend SMD option. Response time, , is typically 3 �s and minimum CTR 20% at input current of 10 mA.

Ordering Information Specify part number followed by Option Number (if desired). 4N25-XXX Option Number W00 VDE0884 Option 0.4" Lead Spacing Option Lead Bend SMD Option Tape and Reel Packaging Option

Features Response time (tr: typ., �s at VCE = 2 mA, = 100 Current Transfer Ratio (CTR: min. = 10 mA, VCE = 10 V) Input-output isolation voltage (Viso = 2500 Vrms) Dual-in-line package UL approved CSA approved VDE approved Options available: � Leads with 0.4" (10.16 mm) spacing (W00) � Leads bends for surface mounting (300) � Tape and reel for SMD (500) � VDE 0884 approvals (060) Applications I/O interfaces for computers System appliances, measuring instruments Signal transmission between circuits of different potentials and impedances

CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.

Absolute Maximum Ratings Storage Temperature, TS Operating Temperature, TA Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, VCEO Emitter-Collector Voltage, VECO Collector-Base Voltage, VCBO Collector Power Dissipation Total Power Dissipation Isolation Voltage, V iso (AC for 1 minute, R.H. +100�C 260�C for mW 2500 Vrms

Electrical Specifications (TA = 25�C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current *Current Transfer Ratio Collector-Emitter Saturation Voltage Response Time (Rise) Response Time (Fall) Isolation Resistance Floating Capacitance I * CTR 100% IF Symbol IR Ct ICEO BVCEO BVECO BVCBO IC CTR VCE(sat) tr tf Riso Cf Min. 1010 � Typ. 1011 1 Max. Units �s pF Test Conditions = 1 KHz VCE = 0.1 mA, = 10 �A, = 0.1 mA, 10 mA VCE = 50 mA, 2 mA VCE ~ 60% R.H. = 1 MHz


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