The 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Most Economical Optoisolator Choice for Medium Speed, Switching Applications Meets or Exceeds All JEDEC Registered Specifications To order devices that are tested and marked per VDE 0884 requirements, the suffix "V" must be included at end of part number. VDE is a test option. Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances I/O Interfacing Solid State Relays MAXIMUM RATINGS (TA = 25�C unless otherwise noted)
Rating INPUT LED Reverse Voltage Forward Current Continuous LED Power Dissipation = 25�C with Negligible Power in Output Detector Derate above 25�C OUTPUT TRANSISTOR Collector�Emitter Voltage Emitter�Collector Voltage Collector�Base Voltage Collector Current Continuous Detector Power Dissipation = 25�C with Negligible Power in Input LED Derate above 25�C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation = 25�C Derate above 25�C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16 from case) VISO PD TA Tstg +150 260 Vac(pk) mW mW/�C �C VCEO VECO VCBO IC PD Volts mA mW mW/�C IF PD Volts mA mW mW/�C 2 3 Symbol Value Unit[CTR = 20% Min] [CTR = 10% Min] *Motorola Preferred Devices
5 4 PIN LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE
1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Optoelectronics Device Data � Motorola, Inc. 1995
Characteristic INPUT LED Forward Voltage (IF = 10 mA) 100�C VF Volts Symbol Min Typ(1) Max Unit
Reverse Leakage Current (VR 3 V) Capacitance = 1 MHz) OUTPUT TRANSISTOR Collector�Emitter Dark Current (VCE = 25�C (VCE = 100�C) Collector�Base Dark Current (VCB 10 V) Collector�Emitter Breakdown Voltage (IC = 1 mA) Collector�Base Breakdown Voltage (IC = 100 �A) Emitter�Collector Breakdown Voltage (IE = 100 �A) DC Current Gain (IC = 2 mA, VCE 5 V) Collector�Emitter Capacitance = 1 MHz, VCE = 0) Collector�Base Capacitance = 1 MHz, VCB = 0) Emitter�Base Capacitance = 1 MHz, VEB = 0) COUPLED Output Collector Current (IF = 10 mA, VCE 4N25,25A,26 4N27,28 Collector�Emitter Saturation Voltage (IC = 2 mA, = 50 mA) Turn�On Time (IF = 10 mA, VCC 100 )(3) Turn�Off Time (IF = 10 mA, VCC 100 )(3) Rise Time (IF = 10 mA, VCC 100 )(3) Fall Time (IF = 10 mA, VCC 100 )(3) Isolation Voltage = 60 Hz, 1 sec)(4) Isolation Resistance 500 V)(4) Isolation Capacitance 4N25,25A,26,27 4N28 All Devices
Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figure 11. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2 VF, FORWARD VOLTAGE (VOLTS) PULSE ONLY PULSE C , OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 NORMALIZED TO: mA 1Figure 1. LED Forward Voltage versus Forward Current
Figure 2. Output Current versus Input Current
Figure 3. Collector Current versus Collector�Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
Figure 5. Dark Current versus Ambient Temperature
Figure 6. Rise and Fall Times (Typical Values)