Homedatasheet4N25GV

4N25GV Datasheet

Optocoupler, Phototransistor Output
Share:
Manufacturer

Description

Features, Applications

Description

The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

D For appl. class IV at mains voltage V D For appl. class I � III at mains voltage 600 V

according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.

These couplers perform safety functions according to the following equipment standards:

Safety for mains-operated electronic and related household apparatus Office machines (applied for reinforced isolation for mains voltage 400 VRMS) apparatus and data

Ordering Code CTR Ranking G = Leadform 10.16 mm; G is not marked on the body Remarks
D Rated recurring peak voltage (repetitive) D Creepage current resistance according to

VDE 0303/IEC 112 Comparative Tracking Index: CTI 275 D Thickness through insulation 0.75 mm General features: VIORM = 600 VRMS

VIOTM 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)

D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction:

Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Coupling System A

Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value Unit mW �C

Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO IC ICM PV Tj Value Unit mW �C

Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions = 1 min Tamb 25�C Symbol VIO Ptot Tamb Tstg Tsd Value +125 260 Unit mW �C

Parameter Forward voltage Junction capacitance Test Conditions 50 mA Tamb = 1 MHz Symbol VF Cj Min. Typ. 1.2 50 Max. 1.4 Unit V pF

Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions 100 mA VCE = 0, Tamb = 100�C VCE = 0, Tamb = 100�C Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. Unit V nA

Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions = 50 mA, 2 mA VCE = 10 mA, = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF

Parameter IC/IF Test Conditions VCE 10 mA Type 4N25(G)V 4N35(G)V VCE = 10 mA, 4N35(G)V Tamb = 100�C Symbol CTR Min. 1.00 0.40 Typ. 1 1.5 Max. Unit


Features

Parameters

Download DataSheet PDF View and Download


Manufacturer information

Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email cs@hqew.net.
related datasheet
Browse Alphabetically: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9
Contact Us

+86-755-83536845

One to One Customer Service

17190417227