Homedatasheet4N32-Xxx9

4N32-Xxx9 Datasheet

Optocoupler, Photodarlington Output, High Gain, With Base Connection
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Description

Features, Applications

Optocoupler, Photodarlington Output, High Gain, With Base Connection
Features

Very high current transfer ratio, 500 % Min. High isolation resistance, 1011 Typical Standard plastic DIP package

Underwriters Lab File #E52744 DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1

Description

The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields.

Part 4N33-Xxx7 4N33-Xxx9 Remarks CTR 500 DIP-6 CTR 500 DIP-6 CTR 500 SMD-6 (option 7) CTR 500 SMD-6 (option 9) CTR 500 SMD-6 (option 7) CTR 500 SMD-6 (option 9)

For additional option information and package dimensions see Option Section.

Tamb = 25 �C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Parameter Peak reverse voltage Continuous forward current Power dissipation Derate linearly from 55 �C Test condition Symbol VR IF Pdiss Value Unit mA mW mW/�C

Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Emitter-collector breakdown voltage Test condition Symbol BVCEO BVEBO BVCBO BVECO Value Unit

Parameter Collector(load) current Power dissipation Derate linearly Test condition Symbol IC Pdiss Value 150 2.0

Parameter Total dissipation Derate linearly Isolation test voltage (between emitter and detector, Standard Climate: 23 �C/ 50 %RH, \\nDIN 500 14) Leakage Path Air Path Isolation Resistance VIO 500 V, Tamb 25 �C VIO 500 V, Tamb 100 �C Storange temperature Operating temperature Lead soldering time 260 �C RIO Tamb Tstg VISO Test condition Symbol Ptot Value 3.3 5300 Unit mW mW/� VRMS

Tamb = 25 �C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Parameter Forward voltage Reverse current Capacitance Test condition 0 V Symbol IR CO Min Typ. 0.1 25 Max 1.5 100 Unit � pF

Parameter Breakdown voltage, collectoremitter 1) Breakdown voltage,collectorbase 1) Breakdown voltage,emitterbase 1) Breakdown voltage,emittercollector 1) Leakage current, collectoremitter

Symbol BVCEO BVCBO BVEBO BVECO ICEO hFE

Parameter Colector emitter saturation voltage Coupling capacitance Test condition Symbol VCEsat Min Typ. 1.0 1.5

Parameter Current Transfer Ratio Test condition VCE = 10 mA, Symbol CTR Min 500 Typ. Max Unit %

Parameter Turn on time Turn off time Test condition VCC = 200 mA, = 180 Symbol ton toff Min Typ. Max 5.0 100 Unit �s

Typical Characteristics (Tamb 25 �C unless otherwise specified)
Figure 1. Normalized Non-saturated and Saturated CTRCE vs. LED Current
Figure 2. Normalized Non-saturated and Saturated Collectoremitter Current vs. LED Current

Features

Parameters

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Manufacturer information

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