Homedatasheet4N32

4N32 Datasheet

Photodarlington Optocoupler
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Features, Applications

FEATURES Very High Current Transfer Ratio, 500% Min. High Isolation Resistance, 1011 Typical Standard Plastic DIP Package Underwriters Lab File #E52744 V VDE Approvals #0884 (Available with Option 1)

DESCRIPTION The 4N32 and 4N33 are optically coupled isolators with a Gallium Arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Maximum Ratings Emitter Peak Reverse Voltage........................................3.0 V Continuous Forward Current............................60 mA Power Dissipation 25�C.............................100 mW Derate Linearly from 55�C.......................1.33 mW/�C Detector Collector-Emitter Breakdown Voltage, BVCEO.....30 V Emitter-Base Breakdown Voltage, BVEBO......... 8.0 V Collector-Base Breakdown Voltage, BVCBO..............................................................50 V Emitter-Collector Breakdown Voltage, BVECO.............................................................5.0 V Collector (load) Current..................................125 mA Power Dissipation Ambient..............150 mW Derate Linearly from 25�C.........................2.0 mW/�C Package Total Dissipation Ambient................250 mW Derate Linearly from 25�C.........................3.3 mW/�C Isolation Test Voltage................................. 5300 VRMS (between emitter and detector, Standard Climate: 23�C/50%RH, DIN 50014) Leakage Path........................................ 7.0 mm min. Air Path................................................... 7.0 mm min. Isolation Resistance V/100�C....................................... 1011 Storage to +150�C Operating to +100�C Lead Soldering Time 10 s

Parameter Emitter Forward Voltage Reverse Current Capacitance Detector BVCEO* BVCBO* BVEBO* BVECO* ICEO hFE Package Current Transfer Ratio VCEsat Coupling Capacitance Turn On Time Turn Off Time

2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA www.infineon.com/opto (1-888-463-4636) 2�59 March 11, 2000-21

Figure 1. Forward Voltage versus Forward Current
Figure 5. Non-saturated and Saturated HFE versus Base Current
Figure 2. Normalized Non-saturated and Saturated CTRce versus LED Current
Figure 6. Low to High Propagation Delay versus Collector Load Resistance and LED Current
Figure 3. Normalized non-saturated and Saturated Collector-emitter Current versus LED Current
Figure 7. High to low Propagation Delay versus Collector Load Resistance and LED Current
Figure 4. Normalized Collector-base Photocurrent versus LED Current

2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA www.infineon.com/opto (1-888-463-4636) 2�60


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