4N32X Datasheet

6 Pin w/ Base Lead


Features, Applications

DESCRIPTION The 4N32, 4N33 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio l High Isolation Voltage ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances

ABSOLUTE MAXIMUM RATINGS (25�C unless otherwise specified) Storage Temperature + 150�C Operating Temperature + 100�C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260�C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 5V 100mW

Total Power Dissipation 250mW (derate linearly 3.3mW/�C above 25�C)

ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com

ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com

ELECTRICAL CHARACTERISTICS = 25�C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) MIN TYP MAX UNITS 10 V

TEST CONDITION = 1mA (note = 100�A VCE , 10V VCE , 10V VCE , 10V VCE 2mA IC (note 1) (note 1) VIO = 500V (note 1) VCC = 10V, IC= 200mA , Pulse Width 1ms fig.1

Collector Output Current IC ) (Note 4N31 5 Collector-emitter Saturation VoltageVCE(SAT) 4N29,4N30,4N32,4N33 4N31 Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Output Turn on Time ton Output Turn off Time 4N32, 4N33 toff 100 40

Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.

FIGURE 1 VCC = 200mA, Pulse width 50mA tr Input Output Input ton toff tf

Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) Current transfer ratio CTR

Forward current IF (mA) Collector Current vs. Collector-emitter Voltage 50mA 20 Collector current IC (mA) 40 2mA Ambient temperature �C ) Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter voltage VCE V ) Relative Current Transfer Ratio vs. Ambient Temperature = 25�C

80 Forward current IF (mA) Collector-emitter saturation voltage VCE(SAT) (V)



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