4N33 Datasheet

6-pin Dip Optoisolators Darlington Output


Features, Applications

The 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. Higher Sensitivity to Low Input Drive Current Meets or Exceeds All JEDEC Registered Specifications To order devices that are tested and marked per VDE 0884 requirements, the suffix "V" must be included at end of part number. VDE is a test option. Applications Low Power Logic Circuits Interfacing and coupling systems of different potentials and impedances Telecommunications Equipment Portable Electronics Solid State Relays MAXIMUM RATINGS (TA = 25�C unless otherwise noted)

Rating INPUT LED Reverse Voltage Forward Current Continuous LED Power Dissipation = 25�C Derate above 25�C OUTPUT DETECTOR Collector�Emitter Voltage Emitter�Collector Voltage Collector�Base Voltage Collector Current Continuous Detector Power Dissipation = 25�C Derate above 25�C TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation = 25�C Derate above 25�C Ambient Operating Temperature Range(3) Storage Temperature Range(3) Soldering Temperature (10 sec, 1/16 from case) VISO PD TA Tstg +150 260 Vac(pk) mW mW/�C �C VCEO VECO VCBO IC PD Volts mA mW mW/�C IF PD Volts mA mW mW/�C Symbol Value Unit

[CTR = 100% Min] [CTR = 50% Min] [CTR = 500% Min] *Motorola Preferred Devices

1. Difference in 4N32 and 4N33 is JEDEC Registration for VISO only. All Motorola 6�Pin devices exceed JEDEC specification and are 7500 Vac(pk). The same applies for 4N29 and 4N30. 2. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Optoelectronics Device Data � Motorola, Inc. 1995

Characteristic INPUT LED *Reverse Leakage Current (VR 1 M ohms) *Forward Voltage (IF = 10 mA) Capacitance (VR = 1 MHz) OUTPUT DETECTOR (TA = 25�C and = 0, unless otherwise noted) *Collector�Emitter Dark Current (VCE 10 V, Base Open) *Collector�Base Breakdown Voltage (IC = 100 �A, = 0) *Collector�Emitter Breakdown Voltage (IC = 100 �A, = 0) *Emitter�Collector Breakdown Voltage (IE = 100 �A, 0) DC Current Gain (VCE = 500 �A) COUPLED (TA = 25�C unless otherwise noted) *Collector Output Current 4N32, 4N33 (VCE = 10 mA) 4N30 4N31 Isolation Surge Hz ac Peak, 1 Second) Isolation 500 V) *Collector�Emitter Saturation Voltage(3) (IC = 2 mA, = 8 mA) Isolation = 1 MHz) Turn�On Time(6) (IC = 50 mA, = 200 mA, VCC 10 V) Turn�Off Time(6) (IC = 50 mA, = 200 mA, VCC 4N31, 4N33

* Indicates JEDEC Registered Data. All Motorola 6�pin devices have VISO rating of 7500 Vac(pk). 1. Always design to the specified minimum/maximum electrical limits (where applicable). 2. Current Transfer Ratio (CTR) = IC/IF 100%. 3. Pulse Test: Pulse Width = 300 �s, Duty Cycle 2%. 4. For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common. 5. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 6. For test circuit setup and waveforms, refer to Figure 11.


Figure 1. LED Forward Voltage versus Forward Current
Figure 2. Output Current versus Input Current
Figure 3. Collector Current versus Collector�Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
Figure 5. Collector�Emitter Voltage versus Ambient Temperature
Figure 6. Collector�Emitter Dark Current versus Ambient Temperature



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