Homedatasheet4N35

4N35 Datasheet

Optocoupler, Phototransistor Output, With Base Connection
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Description

Features, Applications

FEATURES Interfaces with Common Logic Families Input-output Coupling Capacitance < 0.5 pF Industry Standard Dual-in-line 6-pin Package Field Effect Stable by TRIOS� 5300 VRMS Isolation Test Voltage Underwriters Laboratory File #E52744 V VDE #0884 Approval Available with Option 1

DESCRIPTION This data sheet presents five families of Vishay Industry Standard Single Channel Phototransistor Couplers. These families include the 4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/ A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/ 277 devices.Each optocoupler consists of Gallium Arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS Isolation Test Voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Compliance to VDE 0884 partial discharge isolation specification is available for these families by ordering option 1. Phototransistor gain stability, in the presence of high isolation voltages, is insured by incorporating a TRansparent lOn Shield (TRIOS)� on the phototransistor substrate. These isolation processes and the Vishay IS09001 Quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.

APPLICATIONS AC Mains Detection Reed Relay Driving Switch Mode Power Supply Feedback Telephone Ring Detection Logic Ground Isolation Logic Coupling with High Frequency Noise Rejection

Notes: Designing with data sheet is covered in Application Note 45.

Maximum Ratings TA=25�C Emitter Reverse Voltage.......................................................................................... 6.0 V Forward Current........................................................................................ 60 mA Surge Current (t10 �s)............................................................................... 2.5 A Power Dissipation................................................................................... 100 mW Detector Collector-Emitter Breakdown Voltage........................................................... 70 V Emitter-Base Breakdown Voltage................................................................ 7.0 V Collector Current....................................................................................... 50 mA Collector Current(t <1.0 ms).................................................................... 100 mA Power Dissipation................................................................................... 150 mW Package Isolation Test Voltage.......................................................................... 5300 VRMS Creepage.............................................................................................. 7.0 mm Clearance............................................................................................. 7.0 mm Isolation Thickness between Emitter and Detector............................... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1.................. 175 Isolation Resistance TA=100�C............................................................................ 1011 Storage Temperature................................................................ to +150�C Operating Temperature............................................................ to +100�C Junction Temperature................................................................................ 100�C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane 1.5 mm)...................................................... 4N25/26/27/28--Characteristics TA=25�C

Emitter Forward Voltage* Reverse Current* Capacitance Detector Breakdown Voltage* Collector-Emitter Emitter-Collector Collector-Base BVCEO BVECO BVCBO pF V Symbol Min. Typ. 0.1 25 Max. 1.5 100 Unit V Condition

ICBO(dark)* Capacitance, Collector-Emitter Package DC Current Transfer Ratio*

Saturation Voltage, Collector-Emitter Resistance, Input to Output* Coupling Capacitance Rise and Fall Times

* Indicates JEDEC registered values Document Number: 83717 Revision 17-August-01

Emitter Forward Voltage* Reverse Current* Capacitance Detector Breakdown Voltage, Collector-Emitter* 4N35/36/37 4N38 Breakdown Voltage, Emitter-Collector* Breakdown Voltage, Collector-Base* 4N35/36/37 4N38 Leakage Current, Collector-Emitter* 4N35/36/37 4N38 Leakage Current, Collector-Emitter* 4N35/36/37 4N38 Capacitance, Collector-Emitter Package DC Current Transfer Ratio* 4N38 DC Current Transfer Ratio* 4N35/36/37 4N38 Resistance, Input to Output* Coupling Capacitance Switching Time*

Emitter Forward Voltage H11A1�H11A4 H11A5 Reverse Current Capacitance Detector Breakdown Voltage, Collector-Emitter Breakdown Voltage, Emitter-Collector Breakdown Voltage, Collector-Base Leakage Current, Collector-Emitter Capacitance, Collector-Emitter Package DC Current Transfer Ratio H11A4 H11A5 Saturation Voltage, Collector-Emitter Capacitance, Input to Output Switching Time


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