4N36 Datasheet

ti 4N36, Optocoupler


Features, Applications

Gallium-Arsenide-Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio High-Voltage Electrical Isolation or 3.55-kV Rating High-Speed Switching = 7 �s, 7 �s Typical Applications Include Remote Terminal Isolation, SCR and Triac Triggers, Mechanical Relays and Pulse Transformers Safety Regulatory Approval UL/CUL, File No. E65085

absolute maximum ratings at 25�C free-air temperature (unless otherwise noted)

Input-to-output peak voltage (8-ms half sine wave): 1.5 kV Input-to-output root-mean-square voltage (8-ms half sine wave): 1.05 kV Collector-base voltage. 70 V Collector-emitter voltage (see Note 30 V Emitter-base voltage. 7 V Input-diode reverse voltage. 6 V Input-diode forward current: Continuous. 60 mA Peak (1 �s, 300 pps). 3 A Phototransistor continuous collector current. 100 mA Continuous total power dissipation at (or below) 25�C free-air temperature: Infrared-emitting diode (see Note 100 mW Phototransistor (see Note 300 mW Continuous power dissipation at (or below) 25�C lead temperature: Infrared-emitting diode (see Note 100 mW Phototransistor (see Note 500 mW Operating temperature range, TA. to 100�C Storage temperature range, Tstg. to 150�C Lead temperature mm (1/16 inch) from case for 10 seconds. 260�C

Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. This value applies when the base-emitter diode is open-circulated. 2. Derate linearly to 100�C free-air temperature at the rate of 1.33 mW/�C. 3. Derate linearly to 100�C free-air temperature at the rate of 4 mW/�C. 4. Derate linearly to 100�C lead temperature at the rate of 1.33 mW/�C. Lead temperature is measured on the collector lead mm (1/32 inch) from the case. 5. Derate linearly to 100�C lead temperature at the rate of 6.7 mW/�C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

electrical characteristics at 25�C free-air temperature (unless otherwise noted)

PARAMETER V(BR)CBO V(BR)CEO V(BR)EBO IR IIO Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Input diode static reverse current Input-to-output current TEST CONDITIONS = 100 �A, = 10 mA, = 100 �A, �A mA MIN TYP MAX UNIT �A mA

Off-state collector current Transistor static forward current transfer ratio Input diode static forward voltage Collector-emitter saturation voltage Input-to-output internal resistance

Cio Input-to-output capacitance VIO = 1 MHz, See Note 2.5 pF JEDEC registered data NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together.

PARAMETER ton toff Time-on time Turn-off time TEST CONDITIONS VCC 100 , IC(on) = 2 mA, See Figure 1 MIN TYP 7 MAX 10 UNIT �s

47 Input Output (see Note + � VCC 100 0V ton 90% 10% Output toff Input

NOTES: A. The input waveform is supplied by a generator with the following characteristics: tr 15 ns, duty cycle = 100 �s. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr 12 ns, Rin 1 M, Cin 20 pF.

Transistor Static Forward Current Transfer Ratio (Normalized)



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