4N38 Datasheet

6-pin High Voltage Phototransistor Coupler


Features, Applications

The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.


High Voltage H11D1, H11D2, BVCER H11D3, H11D4, BVCER 200 V High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute Underwriters Laboratory (UL) recognized File# E90700


Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls

Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation = 25�C Derate above 25�C EMITTER *Forward DC Current *Reverse Input Voltage *Forward Current - Peak (1�s pulse, 300pps) *LED Power Dissipation = 25�C Derate above 25�C Symbol TSTG TOPR TSOL IF VR IF(pk) PD Value +100 260 for 10 sec Units �C mW mW/�C A mW mW/�C

Parameter DETECTOR *Power Dissipation = 25�C Derate linearly above - H11D2 *Collector to Emitter Voltage - H11D2 *Collector Base Voltage H11D4 4N38 *Emitter to Collector Voltage Collector Current (Continuous) - H11D4 VECO VCBO VCER PD Symbol Value mA V Units mW mW/�C

Characteristic EMITTER *Forward Voltage Forward Voltage Temp. Coefficient Reverse Breakdown Voltage Junction Capacitance *Reverse Leakage Current DETECTOR *Breakdown Voltage Collector to Emitter *Collector to Base Emitter to Base Emitter to Collector *Leakage Current Collector to Emitter (RBE = 1 M")

Test Conditions (IF = 10 mA) Symbol ! VF !TA BVR CJ IR BVCER BVCEO BVCBO BVEBO BVECO Device ALL H11D3/4 4N38 ALL H11D1/2 ICER H11D3/4 ICEO 4N38 6 Min Typ** Max 1.5 Unit V mV/�C pF �A

(IE = 0) (VCE = 25�C) (VCE = 100�C) (VCE = 25�C) (VCE = 100�C) (No RBE) (VCE = 25�C)
Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) All typical values = 25�C

DC Characteristic EMITTER Current Transfer Ratio Collector to Emitter (IF = 10 mA, VCE 10 V) (RBE = 1 M") (IF = 10 mA, VCE 10 V) (IF = 10 mA, = 0.5 mA) *Saturation Voltage (RBE = 1 M") (IF = 20 mA, = 4 mA) VCE (SAT) CTR Test Conditions Symbol Device (20) mA Min Typ** Max Unit

Characteristic SWITCHING TIMES Non-Saturated Turn-on Time Turn-off Time Test Conditions (VCE =10 V, ICE = 2 mA) (RL = 100 Symbol ton toff Device ALL Min Typ** 5 Max Unit �s

Characteristic Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions (II-O #$1 �A, 1 min.) (VI-O = 500 VDC) = 1 MHz) Symbol VISO RISO CISO Device ALL Min Typ** Max Unit (VACRMS) (VACPEAK) " pF

Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) All typical values = 25�C



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Manufacturer information


Fairchild has a rich history as a pioneer in the semiconductor industry and that pioneering spirit endures today. In an era where diversity can dilute focus and hamper innovation, we specialize in the development and manufacturing of a complete portfolio of low- to high-power solutions for the mobile, industrial, cloud, automotive, lighting, and computing industries. Fairchild is one of the most reliable partners in the industry, offering the shortest time from concept to silicon, expert FAEs for customer support, and a flexible, multi-source supply chain. Our vision is clear – anticipate the power efficiencies demanded by tomorrow’s electronic products and deliver an amazing design experience

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