4N39 Datasheet

Optocoupler, Photoscr Output, 200 V Vrm, 10 a Surge Current


Features, Applications

Optocoupler, PhotoSCR Output, 200 V VRM, 10 A surge current

Turn on current (IFT), 5.0 mA Typical Gate Trigger current (IGT), 20 �A Surge Anode current, 10 Amp Blocking voltage, 200 V Gate Trigger voltage (VGT), 0.6 Volt Solid State Reliability Standard DIP package Isolation test Voltage, 5300 VRMS

UL - File No. E52744 System Code or J DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 CSA - Certification 093751 BSI EN60950 FIMKO EN60950

Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits.


The 4N39 can be used in SCR triac and solid state relay applications where high blocking voltages and low input current sensitivity are required.


The is an optical coupled SCR with a gallium arsenide infrared emitter and silicon photo SCR sensor.

Tamb = 25 �C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Parameter Peak reverse voltage Peak forward current Continuous forward current Power dissipation 25 �C Derate linearly from 50 �C Document Number 83603 Rev. 20-Nov-03 100 �s, 1 % duty cycle Test condition Symbol VR IF Pdiss Value Unit mA mW mW/�C www.vishay.com 1

Parameter Reverse gate voltage Anode peak blocking voltage Peak reverse gate voltage Anode current Surge anode current Surge gate current Power dissipation Derate linearly from 100 �s duration 5.0 ms duration Pdiss Test condition Symbol Value Unit mA mW mW/�C

Parameter Isolation test voltage Isolation resistance 1.0 sec. VIO 500 V, Tamb 25 �C VIO 500 V, Tamb 100 �C Total package dissipation Derate linearly from 50 �C Operating temperature Storage temperature Soldering temperature 10 sec. Tamb Tstg Tsld Test condition Symbol VISO RIO Ptot Value 1012 10

Tamb = 25 �C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Parameter Forward voltage Reverse current Test condition = 5.0V Symbol VF IR Min Typ. 1.2 Max 1.5 10 Unit V �A

Parameter Forward blocking voltage Reverse blocking voltage On-state voltage Holding current Gate trigger voltage Forward leakage current Reverse leakage current Test condition RGK = 100 �C, 150 �A RGK = 100 �C, 150 �A ITM 300 mA RGK 27 k VFX 50 V VFX 100 V, RGK 28 K RGK 10 K, VRX 100 �C RGK 10 K, VRX 100 �C Symbol VDM VRM VTM IH VGT IDM IRM 0.6 Min Typ. Max Unit V �A

Parameter Turn-on current Isolation capacitance Test condition VFX 50 V, RGK 10 k VFX 100 V, RGK = 1.0 MHz Symbol IFT Min Typ. 8.0 2.0 Max 30 14



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