5962F9568701V9A Datasheet

Radiation Hardened Programmable Low Power op Amp


Features, Applications

The is a Low Power Operational Amplifier which is an internally compensated monolithic device offering a wide range of performance specifications. Parameters such as power dissipation, slew rate, bandwidth, noise and input DC parameters are programmed by selecting an external resistor or current source. Supply voltages as low as �3V may be used with little degradation of AC performance. The HS-3530ARH has been specifically designed to meet exposure to space radiation environments. Operation from 125oC is guaranteed. A major advantage of the HS-3530ARH is that operating characteristics remain virtually constant over a wide supply range to �15V), allowing the amplifier to offer maximum performance in almost any system, including battery operated equipment. A primary application for this device is in active filtering and conditioning for a wide variety of signals that differ in frequency and amplitude. Also, by modulating the set current, it can be used for designs such as current controlled oscillators/modulators, sample and hold circuits and variable active filters.


Radiation Performance - Gamma Dose. x 105 RAD(Si) - SEL. Immune (RSG DI Process) Wide Range AC Programming - Slew Rate. 0.1V/�s - Gain X Bandwidth. to 750kHz Wide Range DC Programming - Power Supply Range. to �15V Supply Current. to 150�A Output Current. to 2.5mA Quiescent Power. 4.8mW (Max) Dielectrically Isolated Device Islands Short Circuit Protection Full to 125oC Military Temperature Range


Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the HS-3530ARH are contained in SMD 5962-95687. A "hot-link" to the DSCC website is provided on our homepage for downloading the document. www.intersil.com/spacedefense/newsafclasst.asp The Intersil Quality Management Plan, listing all screening operations, is available on our website. www.intersil.com/quality/manuals.asp

ORDERING NUMBER 5962F9568701V9A NA PART NUMBER HS2-3530ARH/Proto HS9-3530ARH/Proto TEMP. RANGE (oC) to 125

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright � Intersil Corporation 1999

DIE DIMENSIONS: �25.4�m (68 mils x 55 mils x 21 mils �1 mil) INTERFACE MATERIALS GLASSIVATION Type: Silox (SiO2) Thickness: 8.0kA �1.0kA TOP METALLIZATION Type: AlSiCu Thickness: 16.0kA �2kA SUBSTRATE: Radiation Hardened Silicon Gate, Dielectric Isolation BACKSIDE FINISH: Silicon ASSEMBLY RELATED INFORMATION SUBSTRATE POTENTIAL: Unbiased (DI) ADDITIONAL INFORMATION WORST CASE CURRENT DENSITY: 105 A/cm2 TRANSISTOR COUNT: 49

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: FAX:



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