5962F9800801VXC Datasheet

Radiation Hardened Quad 2-input Multiplexer With Three-state Outputs


Features, Applications

Radiation Hardened Quad 2-Input Multiplexer with Three-State Outputs

The Radiation Hardened is a Quad 2-Channel multiplexer which selects four bits of data from one of two sources under the control of a single select pin. The Output Enable input is active LOW and controls all outputs. When OE is set HIGH, all outputs are configured into a high impedance state, regardless of all other input conditions. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times. The ACS257MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS257 are contained in SMD 5962-98008. A "hot-link" is provided on our homepage with instructions for downloading. http://www.intersil.com/data/sm/index.htm


QML Qualified Per MIL-PRF-38535 Requirements 1.25Micron Radiation Hardened SOS CMOS Radiation Environment - Latch-up Free Under any Conditions - Total Dose. x 105 RAD(Si) - SEU Immunity. x 10-10 Errors/Bit/Day - SEU LET Threshold. >100MeV/(mg/cm2) Input Logic Levels.VIL = (0.3)(VCC), VIH = (0.7)(VCC) Output Current. �8mA Quiescent Supply Current.400�A Propagation Delay - Enable to Output. 13ns - Input or Address to Output. 14ns

4-Bit Source Selection Data Routing High Frequency Switching

SMD PART NUMBER 5962F9800801VEC N/A 5962F9800801VXC N/A INTERSIL PART NUMBER ACS257K/Sample-02 ACS257HMSR-02 TEMP. RANGE (oC) 125 25 PACKAGE 16 Ld SBDIP 16 Ld SBDIP 16 Ld Flatpack 16 Ld Flatpack Die CASE OUTLINE CDIP2-T16 CDFP4-F16 N/A

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright � Intersil Corporation 1999

DIE DIMENSIONS: Size: 2390�m (94 mils x 94 mils) Thickness: �25�m (20.6 mils �1 mil) Bond Pad: x 4.3 mils) METALLIZATION: Al Metal 1 Thickness: 0.7�m �0.1�m Metal 2 Thickness: 1.0�m �0.1�m SUBSTRATE POTENTIAL: Unbiased Insulator PASSIVATION Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30�m �0.15�m SPECIAL INSTRUCTIONS: Bond VCC First ADDITIONAL INFORMATION: Worst Case Density: 105 A/cm2 Transistor Count: 212

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com



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