Radiation Hardened Adjustable Positive Voltage Regulator
The Radiation Hardened is an adjustable positive voltage linear regulator capable of operating to 40VDC. The voltage is adjustable from to 37V with two external resistors. The device is capable of sourcing from to 1.25APEAK (Min). Protection is provided by the on-chip thermal shutdown and output current limiting circuitry. The Intersil HS-117RH has advantages over other industry standard types, in that circuitry is incorporated to minimize the effects of radiation and temperature on device stability. Negligible low dose rate sensitivity is achieved through the use of vertical transistor geometries. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) process, the HS-117RH is immune to Single Event Latch-up and has been specifically designed to provide highly reliable performance in harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for the HS-117RH are contained in SMD 5962-99547. A "hot-link" is provided on our homepage for downloading. www.intersil.com/spacedefense/space.aspFeatures
Electrically Screened to DSSC SMD # 5962-99547 QML Qualified per MIL-PRF-38535 Requirements Radiation Environment - 300kRAD(Si) (Max) - Latch-up Immune - Negligible Low Dose Rate Effects Sensitivity Superior Temperature Stability Over-Temp and Over-Current/Voltage ProtectionApplications
Switch Mode - DC Power Conversion Housekeeping Supplies for Motors Power Supplies for Robotic Control
ORDERING NUMBER 5962F9954701/QYA HS9S-117RH/Proto INTERNAL MKT. NUMBER HS9S-117RH/Proto HSYE-117RH/Proto TEMP. RANGE (oC) to 125
NOTE: No current JEDEC outline for the SMD.5 package. Refer to SMD for package dimensions. The is a totally isolated metal package.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright � Intersil Corporation 2000
DIE DIMENSIONS 2794�m (103 mils x 110 mils) �25.4�m (19 mils �1 mil) INTERFACE MATERIALS Glassivation: Type: Silox (SiO2) Thickness: 8.0k� �1.0k� Top Metallization: Type: AlSiCu Thickness: 16.0k� �2k� Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Gold ASSEMBLY RELATED INFORMATION Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density: 105 A/cm2 Transistor Count: 95
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