Homedatasheet5962F9954701VYA

5962F9954701VYA Datasheet

Radiation Hardened Adjustable Positive Voltage Regulator
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Radiation Hardened Adjustable Positive Voltage Regulator

The Radiation Hardened is an adjustable positive voltage linear regulator capable of operating to 40VDC. The voltage is adjustable from to 37V with two external resistors. The device is capable of sourcing from to 1.25APEAK (Min). Protection is provided by the on-chip thermal shutdown and output current limiting circuitry. The Intersil HS-117RH has advantages over other industry standard types, in that circuitry is incorporated to minimize the effects of radiation and temperature on device stability. Negligible low dose rate sensitivity is achieved through the use of vertical transistor geometries. Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) process, the HS-117RH is immune to Single Event Latch-up and has been specifically designed to provide highly reliable performance in harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for the HS-117RH are contained in SMD 5962-99547. A "hot-link" is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp

Features

Electrically Screened to DSSC SMD # 5962-99547 QML Qualified per MIL-PRF-38535 Requirements Radiation Environment - 300kRAD(Si) (Max) - Latch-up Immune - Negligible Low Dose Rate Effects Sensitivity Superior Temperature Stability Over-Temp and Over-Current/Voltage Protection

Applications

Switch Mode - DC Power Conversion Housekeeping Supplies for Motors Power Supplies for Robotic Control

ORDERING NUMBER 5962F9954701/QYA HS9S-117RH/Proto INTERNAL MKT. NUMBER HS9S-117RH/Proto HSYE-117RH/Proto TEMP. RANGE (oC) to 125

NOTE: No current JEDEC outline for the SMD.5 package. Refer to SMD for package dimensions. The is a totally isolated metal package.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright � Intersil Corporation 2000

DIE DIMENSIONS 2794�m (103 mils x 110 mils) �25.4�m (19 mils �1 mil) INTERFACE MATERIALS Glassivation: Type: Silox (SiO2) Thickness: 8.0k� �1.0k� Top Metallization: Type: AlSiCu Thickness: 16.0k� �2k� Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Gold ASSEMBLY RELATED INFORMATION Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density: 105 A/cm2 Transistor Count: 95

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com 2

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