Homedatasheet5962R9853301VXC

5962R9853301VXC Datasheet

Radiation Hardened, Very Low Noise Quad Operational Amplifier
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Features, Applications

Radiation Hardened, Very Low Noise Quad Operational Amplifier
Description

The is a radiation hardened, monolithic quad operational amplifier that provides highly reliable performance in harsh radiation environments. Its excellent noise characteristics coupled with an unique array of dynamic specifications make this amplifier well-suited for a variety of satellite system applications. Dielectrically isolated, bipolar processing makes this device immune to Single Event Latch-up. The HS-OP470ARH shows almost no change in offset voltage after exposure to 100K RAD(Si) gamma radiation, with only a minor increase in current. Complementing these specifications is a post radiation open loop gain in excess of 40kV/V. This quad operational amplifier is available in an industry standard pinout, allowing for immediate interchangeability with most other quad operational amplifiers. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). SMD numbers must be used when ordering. Detailed Electrical Specifications for this are contained in SMD 5962-98533. A "hot-link" is provided on our homepage with instructions for downloading. http://www.intersil.com/data/sm/index.htm

Features

QML Qualified Per MIL-PRF-38535 Requirements Radiation Environment - Total Dose. x 105 RAD(Si) Low Noise 1kHz. 4.3nV/Hz (Typ) At 1kHz.0.6pA/Hz (Typ) Low Offset Voltage. 2.1mV (Max) High Slew Rate. 1.7V/�s (Min) Gain Bandwidth Product. 8.0MHz (Typ)

Applications

High Q, Active Filters Voltage Regulators Integrators Signal Generators Voltage References Space Environments

SMD PART NUMBER 5962R9853301VXC N/A INTERSIL PART NUMBER HS9-OP470ARH-Q HS9-OP470ARH/Sample TEMP. RANGE (oC) 125 25 PACKAGE 14 Ld Flatpack 14 Ld Flatpack CASE OUTLINE CDFP3-F14

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 321-724-7143 | Copyright � Intersil Corporation 1999

DIE DIMENSIONS: 95 mils x 99 mils x 19 mils �1 mil 483�m �25.4�m) METALLIZATION: Type: Al, 1% Cu Thickness: 16k� �2k� SUBSTRATE POTENTIAL (Powered Up): Unbiased BACKSIDE FINISH: Silicon

PASSIVATION: Type: Nitride (SI3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12k� �2k� Nitride Thickness: 3.5k� �1.5k� WORST CASE CURRENT DENSITY: 105 A/cm2 TRANSISTOR COUNT: 175 PROCESS: Bipolar Dielectric Isolation

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: FAX:


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