Home datasheet 5KP90-B

5KP90-B

R6,5000W,TVS
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Description

Features, Applications

5000 WATT PEAK POWER 8.0 WATTS STEADY STATE
FEATURES

Plastic package has underwriters laboratory Glass passivated chip construction 5000 watt surage capability at 1ms Excellent clamping capability Low zener impedance Fast response time

Ratings o C ambient temperature unless otherwise specified.

Ratings 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load, For capacitive load, derate current by 20%.

For Bidirectional use or CA suffix for types 5KP5.0 thru 5KP110 Electrical characteristics apply in both direction

MAXIMUM RATINGS (At 25 C unless otherwise noted) RATINGS Peak Pulse Power Dissipation with a 10/1000uS waveform (Note 1, FIG.1) Peak Pulse Current with a 10/1000uS waveform (Note 1, Fig. 3) Steady State Power Dissipation = 75oC lead lengths 0.375" (9.5mm) (Note 2) Peak Forward Surge Current, 8.3ms single half sine wavesuperimposed on rated load( JEDEC METHOD ) (Note 3) Instantaneous Forward Voltage at 100A, (Note 3) Operating and Storage Temperature Range

UNITS Watts Amps Watts Amps Volts

NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above 25 C per Fig.2. 2. Mounted on copper pad area 20mm ) per Fig. 5 3. Measured on 8.3mS single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.

FIG. 1 - PEAK PULSE POWER RATING CURVE PPPM, PEAK PULSE POWER, kW 100
FIG. 3 - PULSE WAVEFORM 150 IPPM, PEAK PULSE CURRENT,%
Pulse Width (td) is Defined as the Point Where the Peak Current Decays 50% of IPPM
IPPM HALF VALUE 2 10/1000usec. Waveform as Defined by R.E.A.
FIG. 5 - STEADY STATE POWER DERATING CURVE
PM(AV), STEADY STATE POWER DISSIATION, WATTS
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL
IFSM, PEAK FORWARD SURGE CURRENT AMPERES
Maximum Peak Pulse Current IPPM (Amps)

Features

Parameters

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Manufacturer information

RECTRON is a leading manufacturer of power semiconductors, offering a comprehensive range of rectifiers including bridge rectifiers, switching diodes, zener diodes, signal transistors and transient voltage suppressors. Product technologies include schottky barrier, ultra fast, super fast, epitaxial, high efficiency, fast recovery, and standard recovery, which is available in a proprietary glass passivated junction construction that significantly increases long term and environmental reliability. All product technologies are produced in a variety of topologies and include axial lead ,SIP, DIP, CASE, surface mount, SOD, SMA, SMB, SMC, DIP, chip & die custom packages.

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