Home datasheet 5SGA06D4502


Asymmetric Gate Turn-off Thyristor


Features, Applications

Patented free-floating silicon technology Low on-state and switching losses Central gate electrode Industry standard housing Cosmic radiation withstand rating

Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate

Symbol Conditions VDRM VRRM VDclink Ambient cosmic radiation at sea level in open air. VGR 2 V
Parameter Repetitive peak off-state current Repetitive peak reverse current
Symbol Conditions IDRM IRRM VD = VDRM, VGR VR = VRRM, RGK � W
Symbol Conditions Fm Symbol Conditions m Ds Anode to Gate 0.1 mm
Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance

Air strike distance Da Anode to Gate 20.5 1) Maximum rated values indicate limits beyond which damage to the device may occur

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral

Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t ITSM I2t Symbol Conditions rT IH

= 8.3 ms, Tvj = 125�C, sine wave After Surge: = 10 ms, Tvj = 125�C, sine wave After Surge: = 1 ms, Tvj = 125�C, sine wave After Surge: 0 V

Parameter On-state voltage Threshold voltage Slope resistance Holding current

Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Min. on-time

Symbol Conditions diT/dtcr ton Symbol Conditions td tr Eon = 0.5 VDRM, Tvj 600 A, di/dt = 200 A/�s, IGM 20 A, diG/dt = 20 A/�s, = 1 �F, 10 W Tvj 600 A, IGM 20 A, diG/dt = 20 A/�s 1 Hz

Parameter Turn-on delay time Rise time Turn-on energy per pulse
Parameter Max. controllable turn-off current Spike Voltage Min. off-time

Symbol Conditions ITGQM VDSP toff Symbol Conditions tS tf Eoff IGQM = 0.5 VDRM, Tvj 125 �C VDM � VDRM, diGQ/dt = 20 A/�s, ITGQ = ITGQM, = 1 �F, 0.15 �H RCD Snubber VDM � VDRM, = 0.5 VDRM diGQ/dt = 20 A/�s, = 1 �F, � 0.15 �H, RCD Snubber

Parameter Storage time Fall time Turn-on energy per pulse Peak turn-off gate current
Parameter Repetitive peak reverse voltage Repetitive peak reverse current
Parameter Gate trigger voltage Gate trigger current
Parameter Junction operating temperature Storage temperature range
Symbol Tvj Tstg Symbol Rth(jc) Rth(jc)A Rth(jc)C

Conditions Double side cooled Anode side cooled Cathode side cooled Single side cooled Double side cooled

Thermal resistance case to heatsink (Double side cooled)



Manufacturer information

Warm Hint

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