Home datasheet 5SGA30J4505

5SGA30J4505

Asymmetric Gate Turn-off Thyristor
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Description

Features, Applications

Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating

Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate

Symbol Conditions VDRM VRRM VDC-link Ambient cosmic radiation at sea level in open air. VGR 2 V
Parameter Repetitive peak off-state current Repetitive peak reverse current
Symbol Conditions IDRM IRRM VD = VDRM, VGR VR = VRRM, RGK =
Symbol Conditions Fm Symbol Conditions Ds Da Anode to Gate Anode to Gate 0.1 mm

Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance

Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral

Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t Symbol Conditions rT IH
tp = ms, Tvj = 125�C, sine wave After Surge: tp = ms, Tvj = 125�C, sine wave After Surge: 0 V
Parameter On-state voltage Threshold voltage Slope resistance Holding current

Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Min. on-time

Parameter Turn-on delay time Rise time Turn-on energy per pulse

Symbol Conditions td tr Eon = 0.5 VDRM, Tvj 3000 A, di/dt = 200 A/�s, IGM 30 A, diG/dt = 20 A/�s, = 6 �F, = 5

Parameter Max. controllable turn-off current Min. off-time

Symbol Conditions ITGQM toff VDM VDRM, diGQ/dt = 40 A/�s, = 6 �F, = 0.5 VDRM, Tvj 125 �C VDM VDRM, diGQ/dt = 40 A/�s, ITGQ = ITGQM, = 6 �F, 0.3 �H

Parameter Storage time Fall time Turn-on energy per pulse Peak turn-off gate current

Symbol Conditions tS tf Eoff IGQM = 0.5 VDRM, Tvj 125 �C VDM VDRM, diGQ/dt = 40 A/�s, ITGQ = ITGQM, = 6 �F, 0.3 �H

Parameter Repetitive peak reverse voltage Repetitive peak reverse current
Parameter Gate trigger voltage Gate trigger current
Parameter Junction operating temperature Storage temperature range
Symbol Tvj Tstg Symbol Rth(j-c) Rth(j-c)A Rth(j-c)C

Conditions Double side cooled Anode side cooled Cathode side cooled Single side cooled Double side cooled

Thermal resistance case to heatsink (Double side cooled)

Features

Parameters


Manufacturer information

Warm Hint

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