6N135 Datasheet

Global Supplier of Optoelec tronic Solutions


[CT Micro International Corporation]

The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor.
The devices are packaged in an 8-pin DIP package and also available in gullwing (400mil) and surface mount lead forming.

• High speed 1MBit/s
• High isolation voltage between input and output (Viso=5000 Vrms )
• Guaranteed CTR performance from 0°C to 70°C
• Wide operating temperature range of -55°C to 100°C
• Regulatory Approvals
   ■ UL - UL1577 (E364000)
   ■ VDE - EN60747-5-5(VDE0884-5)
   ■ CQC – GB4943.1, GB8898
   ■ IEC60065, IEC60950

• Line receivers
• Telecommunication equipment
• High speed logic ground isolation
• Feedback loop in switch-mode power supplies
• Home appliances



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