Homedatasheet6N136

6N136 Datasheet

High Speed Optocoupler, 1 Mbd, Photodiode With Transistor Output
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Description

Features, Applications

FEATURES Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity Bandwidth 2.0 MHz Open-Collector Output External Base Wiring Possible Field-Effect Stable by TRIOS* Underwriters Lab File #E52744 V VDE #0884 Approval Available with Option 1

Cathode (VCC) Base (VB) Collector (VO) Emitter (GND)

Description The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photodetector which consists of a photodiode and a high-speed transistor a DIP-8 plastic package. Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. Maximum Ratings Emitter Reverse Voltage..............................................5.0 V Forward Current.............................................25 mA Peak Forward Current (t =1.0 ms, duty cycle 50%).........................50 mA Maximum Surge Forward Current (t 1.0 �s, pulses/s).................................1.0 A Thermal Resistance................................... 700 K/W Total Power Dissipation (TA70�C)...............45 mW Detector Supply Voltage..................................... 15 V Output Voltage...................................... 15 V Emitter-Base Voltage.......................................5.0 V Output Current..............................................8.0 mA Maximum Output Current..............................16 mA Base Current................................................ 5.0 mA Thermal Resistance................................... 300 K/W Total Power Dissipation (TA70�C).............100 mW Package Isolation Test Voltage (between emitter and detector climate per DIN 50014, part 2, Nov. (t=1.0 s).....................5300 VRMS Pollution Degree (DIN VDE 0109)....................... 2.0 Creepage................................................... 7.0 mm Clearance.................................................. 7.0 mm Comparative Tracking Index per DIN IEC112/VDE 0303 part 1, Group IIIa per DIN VDE 6110........................ 175 Isolation Resistance TA=100�C.............................. 1011 Storage Temperature to +125�C Ambient Temperature Range....... to +100�C Soldering Temperature (max. 10 s, dip soldering 0.5 mm from case bottom)....... 260�C

Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Temperature Coefficient, Forward Voltage Detector Supply Current Logic Low Supply Current Logic High Output Voltage, Output Low 6N135 6N136 Output Current, Output High Output Current, Output High Package Coupling Capacitance, Input-Output Current Transfer Ratio 6N135 6N136


Parameter High, IF=0 mA Low, 6N135 6N136 CML Symbol CMH Value 1000 Unit V/�s Condition

Figure 10. Logic High Output Current vs. Temperature

Features

Parameters

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Manufacturer information

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