015AZ7.5-Y Datasheet

Toshiba Diode Silicon Epitaxial Planar Type


Features, Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Unit: mm l Small package l Nominal voltage tolerance about �2.5% (2.0V~12V)

Characteristics Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg Rating 125 -55~125 Unit mW �C

* Mounted on a glass epoxy circuit board � 20mm, Pad dimension � 4mm. JEDEC JEITA 1-1G1A



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