Homedatasheet13005BAL-T92-A-B

13005BAL-T92-A-B Datasheet

NPN SILICON POWER TRANSISTORS
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Description

DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

FEATURES
* VCEO(SUS)= 800 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
              tC @ 3A, 100°С is 180 ns (Typ)
* 800V blocking capability
* SOA and switching applications information

Features

Parameters


Manufacturer information

UNISONIC TECHNOLOGIES
Warm Hint

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