Homedatasheet13PD150-TO

13PD150-TO Datasheet

High Performance Ingaas P-i-n Photodiode
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Description

Features, Applications

The 13PD150-TO, an InGaAs photodiode with a 150�m-diameter photosensitive region packaged a TO-46 header, is intended for moderate-to-high speed applications. Efficient coupling to mulit-mode fiber in active device receptacles is enabled by the relatively large photosensitive area. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by hermetic sealing and a 100% purge burn-in 200oC, 15 hours, = 20V Chips can also be attached and wire bonded to customer supplied or other specified packages. Headers are available with either a lensed or flat window cap.

Features
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity

Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature


Features

Parameters

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Manufacturer information

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