Homedatasheet1MBI150NH-060

1MBI150NH-060 Datasheet

Igbt Module (N Series)
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Description

Features, Applications
Features

High speed switching Low inductance module structure Suitable for Chopper and Dynamic brake circuit

Applications
Uninterruptible power supply Inverter for Motor drive
Absolute maximum ratings (at Tc=25�C unless otherwise specified)

IGBT Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms Max. power dissipation Repetitive peak dissipation Forward current 1ms Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC pulse PC VRRM IF pulse Tj Tstg Vis Mounting *1 Terminals *1 Rating (1min.) 3.5 Unit �C V Nm

Item IGBT Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time FWD Diode forward on voltage Reverse recovery time Reverse current Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr IRRM Characteristics Min. Typ. Max. Conditions IF=150A VR=600V Unit V pF

Item Symbol Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. Conditions Max. 0.47 � IGBT FWD the base to cooling fin �C/W Unit

*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound

Collector current vs. Collector-Emitter voltage 350 300 Collector current : Ic [A] Collector current : Ic [A] 350 300

1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.]

Forward current vs. Forward voltage 350 300 Forward current : IF [A] Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 500

Transient thermal resistance 1 1400 Thermal resistance : Rth (j-c) [�C/W]
Reversed biased safe operating area > +VGE=15V, -VGE = 16 ohm

Features

Parameters

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Manufacturer information

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