1N6638US,1N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER 1N6638U,1N6642U, 1N6643U AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/578 SWITCHING DIODES NON-CAVITY GLASS PACKAGE METALLURGICALLY BONDED
Operating Temperature: to +175�C Storage Temperature: to +175�C Operating Current: 300 mA Derating: 4.6 mA/�C Above TEC + 110�C Surge Current: IFSM = 2.5A, half sine wave, = 8.3ms
V BR TYPES �A V RWM V F1 IFM =10 mA (Pulsed) V (pk) 75 V (pk) 1.1 1.2 (Pulsed) I F2 tfr ns 20 trr 10 mA IREC 5.0 6.0CASE: D-5D, Hermetically sealed glass case, per MIL-PRF- 19500/578 LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC): 50 �C/W maximum = 0 THERMAL IMPEDANCE: (ZOJX): 25 �C/W maximum POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately 4PPM / �C. The COE of the Mounting Surface System should be selected to provide a suitable match with this device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (781) 689-0803 WEBSITE: http://www.microsemi.comVF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1.1 1.2
Percent of Reverse Working Voltage FIGURE 3 Typical Reverse Current vs Reverse Voltage