High speed performance 90 ns access time available CMOS Technology for low power consumption 20 mA Active current 100 �A Standby current Factory programming available Auto-insertion-compatible plastic packages Auto ID aids automated programming Separate chip enable and output enable controls High speed "express" programming algorithm Organized x 8: JEDEC standard pinouts - 28-pin Dual-in-line package - 32-pin PLCC Package - 28-pin SOIC package - Tape and reel Data Retention > 200 years Available for the following temperature ranges: - Commercial: +70�C - Industrial: +85�C - Automotive: to +125�CDESCRIPTION
The Microchip Technology Inc. is a CMOS 256K bit electrically Programmable Read Only Memory (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. This very high speed device allows the most sophisticated microprocessors to run at full speed without the need for WAIT states. CMOS design and processing enables this part to be used in systems where reduced power consumption and reliability are requirements. A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC, or SOIC packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages.
Function Address Inputs Chip Enable Output Enable Programming Voltage Data Output +5V Power Supply Ground No Connection; No Internal Connection Not Used; No External Connection Is Allowed
VCC and input voltages w.r.t. VSS........ to +7.25V VPP voltage w.r.t. VSS during programming....................................... to +14.0V Voltage on A9 w.r.t. VSS....................... to +13.5V Output voltage w.r.t. VSS.................-0.6V to VCC +1.0V Storage temperature.......................... to +150�C Ambient temp. with power applied...... to +125�C
*Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
VCC +5V (�10%) Commercial: Industrial: Extended (Automotive): Tamb to +70�C Tamb to +85�C Tamb to +125�C Conditions
Parameter Input Voltages Input Leakage Output Voltages Output Leakage Input Capacitance Output Capacitance Power Supply Current, ActiveStatus Logic "1" Logic "0" Logic "1" Logic "0" TTL input TTL input
VIN 0 to VCC IOH -400 �A IOL 2.1 mA VOUT 0V to VCC VIN = 0V; Tamb = 1 MHz VOUT = 0V; Tamb = 1 MHz VCC = 5.5V; VPP = VCC = 1 MHz; CE = VIL; IOUT = 0 mA; VIL to 0.8V; VIH 2.0 to VCC; Note 1Power Supply Current, Standby IPP Read Current VPP Read Voltage
TTL input TTL input CMOS input Read Mode Read Mode
* Parts: C=Commercial Temperature Range; I, E=Industrial and Extended Temperature Ranges
Note 1: Typical active current increases.75 mA per MHz up to operating frequency for all temperature ranges.
AC Testing Waveform: Output Load: Input Rise and Fall Times: Ambient Temperature: VIH = 2.4V and VIL = 0.45V; VOH = 2.0V VOL 0.8V 1 TTL Load 10 ns Commercial: Tamb to +70�C Industrial: Tamb to +85�C Automotive: Tamb to +125�C Units Conditions Min Address to Output Delay CE to Output Delay OE to Output Delay OE to O/P High Impedance Output Hold from Address CE or OE, whichever goes first tACC tCE tOE tOFF tOH 0 Max Min 0 Max Min 0 Max Min 0 Max Min Max ns CE=OE =VIL OE = VIL CE = VIL
Notes: (1) tOFF is specified for OE or CE, whichever occurs first (2) OE may be delayed CE - tOE after the falling edge of CE without impact on tCE (3) This parameter is sampled and is not 100% tested.