Homedatasheet27LV256-20ISO

27LV256-20ISO Datasheet

256k ( 32k X 8 ) Low-voltage CMOS EPROM
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Description

Features, Applications
FEATURES

Wide voltage range to 5.5V High speed performance 200 ns access time available at 3.0V CMOS Technology for low power consumption 8 mA Active current 20 mA Active current 100 �A Standby current Factory programming available Auto-insertion-compatible plastic packages Auto ID aids automated programming Separate chip enable and output enable controls High speed "Express" programming algorithm Organized x 8: JEDEC standard pinouts - 28-pin Dual-in-line package - 32-pin PLCC package - 28-pin SOIC package - 28-pin VSOP package - Tape and reel Data Retention > 200 years Available for the following temperature ranges: - Commercial: +70�C - Industrial: to +85�C

DESCRIPTION

The Microchip Technology Inc. is a low voltage (3.0 volt) CMOS EPROM designed for battery powered applications. The device is organized 8 (32K-Byte) non-volatile memory product. The 27LV256 consumes only 8 mA maximum of active current during a 3.0 volt read operation therefore improving battery performance. This device is designed for very low voltage applications where conventional 5.0 volt only EPROMS can not be used. Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than at 3.0V. This device allows systems designers the ability to use low voltage non-volatile memory with today's' low voltage microprocessors and peripherals in battery powered applications. A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC, VSOP or SOIC packaging is available. Tape and reel packaging is also available for PLCC or SOIC packages.

Function Address Inputs Chip Enable Output Enable Programming Voltage Data Output or +3V Power Supply Ground No Connection; No Internal Connection Not Used; No External Connection Is Allowed

VCC and input voltages w.r.t. VSS........ to +7.25V VPP voltage w.r.t. VSS during programming......................................... to +14V Voltage on A9 w.r.t. VSS...................... to +13.5V Output voltage w.r.t. VSS............... -0.6V to VCC +1.0V Storage temperature.......................... to +150�C Ambient temp. with power applied..... to +125�C

*Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

VCC or 3.0V where indicated Commercial: Tamb to +70�C Industrial: Tamb to +85�C

Parameter Input Voltages Input Leakage Output Voltages Output Leakage Input Capacitance Output Capacitance Power Supply Current, Active

Status Logic "1" Logic "0" Logic "1" Logic "0" TTL input TTL input

VIN 0 to VCC IOH -400 �A IOL 2.1 mA VOUT 0V to VCC VIN = 0V; Tamb = 1 MHz VOUT = 0V; Tamb = 1 MHz VCC = 5.5V; VPP = VCC = 1 MHz; CE = VIL; IOUT = 0 mA; VIL to 0.8V; VIH 2.0 to VCC; Note 1

* Parts: C=Commercial Temperature Range I =Industrial Temperature Ranges

Note 1: Typical active current increases.75 mA per MHz up to operating frequency for all temperature ranges.

AC Testing Waveform: Output Load: Input Rise and Fall Times: Ambient Temperature: 27HC256-20 Parameter Address to Output Delay CE to Output Delay OE to Output Delay OE to O/P High Impedance Output Hold from Address CE or OE, whichever goes first Sym Min tACC tCE tOE tOFF tOH 0 Max Min 0 Max Min 0 Max OE = VIL OE = VIL CE = VIL VIH = 2.4V and VIL = 0.45V; VOH = 2.0V VOL 0.8V 1 TTL Load 10 ns Commercial: Tamb to +70�C Industrial: Tamb +85�C 27HC256-30 Units Conditions

Notes: (1) tOFF is specified for OE or CE, whichever occurs first (2) OE may be delayed t OE after the falling edge of CE without impact on tCE (3) This parameter is sampled and is not 100% tested.


Features

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