Homedatasheet28C011TRT4FI-20

28C011TRT4FI-20 Datasheet

1 Megabit (128k x 8-bit) Eeprom
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Description

Features, Applications

VCC VSS RES CE WE RES A0 Y Decoder Address Buffer and Latch A7 A16 Data Latch Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy

x 8-bit EEPROM RAD-PAK� radiation-hardened against natural space radiation Total dose hardness: > 100 krad (Si), depending upon space mission Excellent Single Event Effects: - No Latchup MeV/mg/cm2 - SEU 90 MeV/mg/cm2 read mode Package: - 32-pin RAD-PAK� flat package - 32-pin Rad-Tolerant flat package - JEDEC-approved byte-wide pinout High speed: 120, 150, and 200 ns maximum access times available High endurance: - 10,000 erase/write (in Page Mode), - 10 year data retention Page write mode: to 128 bytes Low power dissipation - 20 mW/MHz active (typical) � W standby (maximum)

Maxwell Technologies' 28C011T high-density 1 Megabit x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C011T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28C010T, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK� packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK� provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S.

All data sheets are subject to change without notice

PIN SYMBOL CE WE VCC VSS RDY/BUSY RES DESCRIPTION Address Output Enable Chip Enable Write Enable Power Supply Ground Ready/Busy Reset

PARAMETER Supply Voltage (Relative to VSS) Input Voltage (Relative to VSS) Operating Temperature Range Storage Temperature Range 1. VIN min = -3.0V for pulse width < 50ns.

PARAMETER Supply Voltage Input Voltage SYMBOL VCC VIL VIH RES_PIN Operating Temperature Range 1. VIL min = -1.0V for pulse width 50 ns

(TA = 1 MHZ) PARAMETER Input Capacitance: VIN 0V 1 Output Capacitance: VOUT 0V 1 Guaranteed by design. SYMBOL CIN COUT MIN

(VCC � C, UNLESS OTHERWISE SPECIFIED) PARAMETER Input Leakage Current Output Leakage Current Standby VCC Current Operating VCC Current TEST CONDITION VCC = 5.5V, VIN = 5.5V VCC = 5.5V, VOUT CE = VCC CE = VIH IOUT = 0mA, Duty = 100%, Cycle s at VCC = 5.5V IOUT = 0mA, Duty = 100%, Cycle 150ns at VCC = 5.5V Input Voltage RES_PIN Output Voltage IOL 2.1 mA IOH mA 1. ILI on RES 100 uA max. SUBGROUPS SYMBOL IIL ILO ICC3A ICC3B VIL VIH VH VOL VOH MIN -------2.2 VCC -0.5 -2.4 MAX -V V UNITS �A mA

(VCC � C) PARAMETER Address Access Time OE = VIL, WE = VIH -150 -200 Chip Enable Access Time OE = VIL, WE = VIH -150 -200 SYMBOL tACC SUBGROUPS 10, 11 ---tCE ns MIN MAX UNITS ns


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