HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
Small Package High Gain Bandwidth Product (fT = 6.5 GHz TYP.) Low Noise, High Gain Low Voltage Operation
PACKING STYLE � 0.1 Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation sample. It is available for 50 pcs. one unit sample lot. (Part No.: 2SC5011)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO PT Tj Tstg mW �C
Document No. P10399EJ2V0DS00 (2nd edition) (Previous No. TD-2411) Date Published July 1995 P Printed in Japan
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF MIN. TYP. MAX. 1.0 250 GHz pF dB UNIT TEST CONDITION VCB = 0 VEB = 0 VCE 20 mA*1 VCE 20 mA VCB 1 MHz*2 VCE = 20 mA,f = 1.0 GHz VCE = 7 mA,f = 1.0 GHz
*1 Pulse Measurement; PW 350 �s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification