Homedatasheet2SC5011-T1

2SC5011-T1 Datasheet

High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor 4 Pins Super Mini Mold
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Description

Features, Applications

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES

Small Package High Gain Bandwidth Product (fT = 6.5 GHz TYP.) Low Noise, High Gain Low Voltage Operation

PACKING STYLE � 0.1 Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape.

* Please contact with responsible NEC person, if you require evaluation sample. It is available for 50 pcs. one unit sample lot. (Part No.: 2SC5011)

Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO PT Tj Tstg mW �C

Document No. P10399EJ2V0DS00 (2nd edition) (Previous No. TD-2411) Date Published July 1995 P Printed in Japan

CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF MIN. TYP. MAX. 1.0 250 GHz pF dB UNIT TEST CONDITION VCB = 0 VEB = 0 VCE 20 mA*1 VCE 20 mA VCB 1 MHz*2 VCE = 20 mA,f = 1.0 GHz VCE = 7 mA,f = 1.0 GHz

*1 Pulse Measurement; PW 350 �s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification



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