Homedatasheet2SC5288-T1

2SC5288-T1 Datasheet

NPN Silicon Epitaxial Transistor For L-band Low-power Amplifier
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Description

Features, Applications

NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital cordless phones (DECT, PHS, etc.).

FEATURES

Packing Style Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. +0.2 �0.1

Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.)

Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT Rating (CW) 1.0 (duty = 2.5 (duty = Junction Temperature Storage Temperature Tj Tstg 1/8)Note 1/24)Note Unit W �C

Document No. P10249EJ2V0DS00 (2nd edition) Date Published December 1995 P Printed in Japan

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Power Gain Collector Efficiency Symbol ICBO IEBO hFE P�1 GP Condition VCB = 0 VEB = 0 VCE = 100 mANote MIN. TYP. MAX. 2.5 Unit



Features

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