NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDFEATURES
Ideal for low-noise, high-gain amplification applications = 1.1 dB, 16 dB TYP. = 2 GHz, VCE = 5 mA Maximum available power gain: MAG 19 dB TYP. = 2 GHz, VCE = 20 mA = 25 GHz technology Flat-lead 4-pin thin super mini-mold = 0.59 mm)
Part Number 2SC5508 2SC5508-T2 Quantity Loose product (50 pcs) Taping product (3 kpcs/reel) Packaging Style 8 mm wide emboss taping 1 pin (emitter), 2 pin (collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot
Item Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Value 150 650 Unit �C/WBecause this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Document No. P13865EJ1V0DS00 (1st edition) Date Published March 1999 N CP(K) Printed in Japan
Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Reverse Transfer Capacitance Gain Bandwidth Product Noise Figure Insertion Power Gain Maximum Available Power Gain Maximum Stable Power Gain Output Power 1 dB Compression Point Output Power at Third Order Intercept Point Cre
Notes 1. Pulse measurement PW 350 �s, Duty cycle % 2. Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when the emitter is connected to the guard pin 1 3. MAG S21 4. MSG S12 5. Collector current when P-1 is output
Total Power Dissipation vs. Ambient Temperature, Case Temperature 250 50 PT-TA: Free air PT-TA: Mounted on ceramic board � 15 mm, = 0.6 mm) PT-TC: When case temperature is specified Collector Current vs. DC Base Voltage VCE 2 VAmbient Temperature TA (�C), Case Temperature TC (�C)
Reverse Transfer Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current 30