Homedatasheet2SJ492-ZJ

2SJ492-ZJ Datasheet

Switching P-channel Power MOSFET Industrial Use
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Description

Features, Applications

DESCRIPTION

This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits.

FEATURES

Low on-state resistance 100 m (MAX.) (VGS 185 m (MAX.) (VGS = �10 A) Low Ciss: Ciss 1210 pF (TYP.) Built-in gate protection diode

Drain to Source Voltage (VGS 0 V) Gate to Source Voltage (VDS 0 V) Gate to Source Voltage (VDS 0 V) Drain Current (DC) Drain Current (pulse)

VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT Tch Tstg

Total Power Dissipation (TA = 25�C) Total Power Dissipation (TC = 25�C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy

Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.79 83.3 �C/W
The information in this document is subject to change without notice.
Document No. D11264EJ1V0DS00 (1st edition) Date Published December 1998 NS CP(K) Printed in Japan

CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS �10 A VGS �10 A VDS �1 mA VDS �10 A VDS �60 V, VGS 0 V VGS 20 V, VDS 0 V VDS �10 V VGS MHz �10 A VGS(on) �10 V VDD �20 A VDD �48 V VGS �20 A, VGS �20 A, VGS 0 V di/dt / �s MIN. TYP.

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed VGS -10 V


Features

Parameters

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Manufacturer information

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