Homedatasheet2SK1317-E

2SK1317-E Datasheet

Silicon N-Channel MOS FET
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Description

Features
• High breakdown voltage VDSS = 1500 V
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and motor driver

Application
High speed power switching
 

Features

-
Parameters

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Manufacturer information

RENESAS ELECTRONICS
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