Homedatasheet2SK2414-Z

2SK2414-Z Datasheet

Switching N-channel Power MOSFET Industrial Use
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Description

Features, Applications

DESCRIPTION

The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

FEATURES
Low Ciss 840 pF TYP. Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings

Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 �C) Total Power Dissipation (TA = 25 �C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** PW 10 �s, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS A mJ

The information in this document is subject to change without notice. Document No. D13193EJ2V0DS00 (2nd edition) (Previous No. TC-2495) Date Published March 1998 N CP(K) Printed in Japan

CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. TYP. MAX. 95 2.0 UNIT TEST CONDITIONS VGS 5.0 A VGS 5.0 A VDS 1 mA VDS 5.0 A VDS 60 V, VGS = 0 VGS 20 V, VDS = 0 VDS 10 V VGS MHz 5.0 A VGS(on) 10 V VDD 10 A VDD 48 V VGS 10 A, VGS 10 A, VGS = 0 di/dt = 50 A/�s

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
dT - Percentage of Rated Power PT - Total Power Dissipation - W
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 Pulsed


Features

Parameters

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Manufacturer information

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