2SK3272-01L Datasheet

Low voltage


Features, Applications

This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.


This specifies Fuji Power MOSFET 2SK3272-01L,S,SJ N-Channel enhancement mode power MOSFET for Switching T| pack L-Type Outview See to 5/15 page S-Type Outview See to 6/15 page SJ-Type Outview See to 7/15 page

5.Absolute Maximum Ratings at Tc=25 Description Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current Pulsed Drain Current

(unless otherwise specified) Characteristics *1 L=0.13mH,Vcc=24V Unit *1 VGS=-30V Remarks

Gate-Source Voltage Maximum Avalanche Energy Maximum Power Dissipation Operating and Storage Temperature range

6.Electrical Characteristics at Tc=25 Static Ratings Description Drain-Source Breakdown Voltage Symbol BVDSS

BVDSX Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance

Dynamic Ratings Description Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance td(on) Turn-On Time tr td(off) Turn-Off Time RG=10 ns Symbol gfs Ciss Coss Crss Conditions pF S min. typ. max. Unit

Reverse Diode Description Avalanche Capability Symbol IAV Conditions H Tch=25 See Fig.1 and IF=50A VGS=0V Qrr 80 A min. typ. max. Unit

Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge

7.Thermal Resistance Description Channel to Case Channel to Ambient Rth(ch-c) Rth(ch-a) Symbol min. typ. max. 0.926 75.0 Unit /W



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