Homedatasheet2SK3219-01MR

2SK3219-01MR Datasheet

N-channel Silicon Power MOSFET
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Description

Features, Applications
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max. power dissipation Tc=25�C PD Operating and storage Tch temperature range Tstg Rating to +150 Unit W �C

Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions VGS=0V ID=1mA VDS=VGS ID=20A VDS=25V VDS -di/dt=100A/�s Tch=25�C

Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient





Typical Forward Characteristics of Reverse Diode -ID=f(VSD):80�s pulse test,Tch=25�C

Features

Parameters

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Manufacturer information

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