Homedatasheet2SK3325-S

2SK3325-S Datasheet

Switching N-channel Power MOSFET Industrial Use
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Description

Features, Applications

DESCRIPTION

The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

Low gate charge: 22 nC TYP. (VDD 400 V, VGS = 10 A) Gate voltage rating: �30 V Low on-state resistance RDS(on) = 0.85 MAX. (VGS = 5.0 A) Avalanche capability ratings TO-262, TO-263 package (TO-220AB)

Drain to Source Voltage (VGS 0 V) Gate to Source Voltage (VDS 0 V) Drain Current (DC) Drain Current (pulse)

Total Power Dissipation (TC = 25�C) Total Power Dissipation (TA = 25�C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D14264EJ1V0DS00 (1st edition) Date Published May 2000 NS CP(K) Printed in Japan

CHARACTERISTICS Drain Leakage Current Gate to Source Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 10 A, VGS 10 A, VGS 0 V, di/dt / �s VDD 400 V, VGS 10 A VDD 5.0 A, VGS(on) = 60 TEST CONDITIONS VDS 500 V, VGS 0 V VGS �30 V, VDS 0 V VDS 1 mA VDS 5.0 A VGS 5.0 A VDS 10 V, VGS = 1 MHz MIN. TYP. MAX. �100 3.5 UNIT

Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
Figure4. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed

Figure5. DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 10 Pulsed

Features

Parameters

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