2SK3435-S Datasheet

Switching N-channel Power MOSFET Industrial Use


Features, Applications


The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications.


Super low on-state resistance: 14 m MAX. (VGS 22 m MAX. (VGS = 40 A) Built-in gate protection diode 5 Low Ciss: Ciss 3200 pF TYP.

Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Total Power Dissipation (TA = 25�C) Channel Temperature Storage Temperature
Single Avalanche Current Single Avalanche Energy

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D14604EJ1V0DS00 (1st edition) Date Published March 2000 NS CP(K) Printed in Japan

CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 80 A, VGS 80 A, VGS 0 V, di/dt = 100 A/�s A , VDD 48 V, VGS 40 A, VGS(on) 10 V, VDD = 10 TEST CONDITIONS VGS 40 A VGS 40 A VDS 1 mA VDS 40 A VDS 60 V, VGS 0 V VGS �20 V, VDS 0 V VDS 10 V, VGS = 1 MHz MIN. TYP. MAX. 22 2.5 UNIT

Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time
Rise Time Turn-off Delay Time Fall Time
Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage
Reverse Recovery Time Reverse Recovery Charge

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.



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