5962-9684302VXA Datasheet

LM113 - Precision Reference, Package: TO-46, Pin Nb=2


Features, Applications

The LM113 LM313 are temperature compensated low voltage reference diodes They feature extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability The diodes are synthesized using transistors and resistors in a monolithic integrated circuit As such they have the same low noise and long term stability as modern IC op amps Further output voltage of the reference depends only on highly-predictable properties of components in the IC so they can be manufactured and supplied to tight tolerances

Dynamic impedance 0 3X from 20 mA Temperature stability typically 125 C range C (LM313) Tight tolerance g 1%

The characteristics of this reference recommend it for use in bias-regulation circuitry in low-voltage power supplies or in battery powered equipment The fact that the breakdown voltage is equal to a physical property of silicon the energy-band gap voltage makes it useful for many temperature-compensation and temperature-measurement functions

Typical Applications

If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 3) Power Dissipation (Note 1) Reverse Current Forward Current 50 mA Storage Temperature Range Lead Temperature (Soldering 10 seconds) Operating Temperature Range LM113 LM313

Parameter Reverse Breakdown Voltage LM113-1 LM113-2 Reverse Breakdown Voltage Change Reverse Dynamic Impedance Forward Voltage Drop RMS Noise Voltage Reverse Breakdown Voltage Change with Current Breakdown Voltage Temperature Coefficient Conditions Min Typ Max Units % C

Note 1 For operating at elevated temperatures the device must be derated based 150 C maximum junction and a thermal resistance C W junction to case C W junction to ambient Note 2 These specifications apply for 25 C unless stated otherwise At high currents breakdown voltage should be measured with lead lengths less than inch Kelvin contact sockets are also recommended The diode should not be operated with shunt capacitances between 200 pF and 1 mF unless isolated by at least a 100X resistor as it may oscillate at some currents Note 3 Refer to the following RETS drawings for military specifications RETS113-1X for LM113-1 RETS113-2X for or RETS113X for LM113

Temperature Drift Reverse Dynamic Impedance Reverse Characteristics
Reverse Characteristics Reverse Dynamic Impedance Noise Voltage
Amplifier Biasing for Constant Gain with Temperature Constant Current Source



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