Homedatasheet61058-X01

61058-X01 Datasheet

(GS4021) Phototransistor in TO-46 Package With Dome Lens, Large Aperture.
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Description

Features, Applications

Features: Hermetically sealed High sensitivity Base lead provided for conventional transistor biasing Narrow viewing angle Spectrally matched to the 62033 series LED.

Applications: Incremental encoding Reflective sensors Position sensors Level sensors

DESCRIPTION The is an N-P-N Planar Silicon phototransistor in a lensed TO-46 three-lead package. It is available in a range of sensitivities and is ideal for use wherever high response, low dark current leakage, and low saturation characteristics are required. Available custom binned to customer specifications or screened to MIL-PRF-19500.

ABSOLUTE MAXIMUM RATINGS Storage to +150�C Operating Temperature (See part selection guide for actual operating to +125�C Collector-Emitter Voltage........................................................................................................................................................ 50V Emitter-Collector Voltage.......................................................................................................................................................... 7V Continuous Collector Current..............................................................................................................................................50mA Power Dissipation (Derate at the rate of 2.5 mW/�C above 25�C)..................................................................................250mW Lead Soldering Temperature (1/16" from case for 10 seconds)........................................................................................ 240�C Package Dimensions Schematic Diagram

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, (972) 272-3571 Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@micropac.com

Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Light Current Rise Time

Angular Response 61058-XXX 10 NOTES: 2 1. Irradiance in mW/cm from a tungsten source at a color temperature 2870K.. 2. The angle between incidence for peak response and incidence for 50% of peak response. ANGULAR RESPONSE


PARAMETER Bias Voltage-Collector/Emitter Irradiance (H) SYMBOL IF H MIN 5 15 MAX 10 25 UNITS mA mW/cm2

PART NUMBER PART DESCRIPTION Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package to +125�C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package to +125�C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package to +125�C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package to +125�C) with 100% screening IL Range 15+ mA

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, (972) 272-3571 Fax (972) 487-6918 www.micropac.com E-MAIL: optosales@microopac.com


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