HomedatasheetCM400HA-28H

CM400HA-28H Datasheet

400 Amp Igbt Module For High Power Switching Use Insulated Type
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Description

Features, Applications

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. a 1400V (VCES), 400 Ampere Single IGBT Module.

Type CM Current Rating Amperes 400 VCES Volts 50) 28

Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Dia. M6 Metric M4 Metric Millimeters Dia. M6 M4

HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, 25 �C unless otherwise specified

Symbol Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC =25�C) Peak Collector Current (Tj 150�C) Emitter Current** (TC =25�C) Peak Emitter Current** Maximum Collector Dissipation (TC =25�C) Mounting Torque, M6 Terminal Mounting Torque, M6 Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Units �C Volts Amperes Watts Nm Grams Vrms
Static Electrical Characteristics, 25 �C unless otherwise specified

Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 40mA, VCE = 400A, VGE = 400A, VGE = 150�C Total Gate Charge Emitter-Collector Voltage VCC = 400A, VGE = 400A, VGE = 0V Min. Typ. Max. Units mA �A Volts nC Volts

Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, 25 �C unless otherwise specified

Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr = 400A, diE/dt = 400A, diE/dt = �800A/�s VCC = 0.78 VGE = 0V, VCE = 10V Test Conditions Min. Typ. Max. Units ns �C

Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, 25 �C unless otherwise specified

Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. � Typ. � Max. 0.09 0.040 Units �C/W Sep.2000

COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF)
SWITCHING TIME, (ns) REVERSE RECOVERY TIME, t rr, (ns)

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