HomedatasheetCM600E2Y-34H

CM600E2Y-34H Datasheet

Modules
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Features, Applications

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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

q IC................................................................... 600A q VCES....................................................... 1700V q Insulated Type in a pack (for brake)

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb.1999
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Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short = 25�C Pulse = 25�C Pulse = 25�C Conditions Ratings Unit �C V Nm kg

Main terminal to Base, AC for 1 minute Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value

Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 1) trr (Note 1) Qrr (Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) VFM trr Qrr Rth(j-c) Rth(c-f)

Parameter Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance

Test conditions VCE = VCES, VGE = 60mA, VCE = 10V VGE = VGES, VCE = 600A, VGE = 125�C VCE = 10V VGE = 0V VCC = 600A, VGE = 15V VCC = 3.3 Resistive load switching operation = 600A, VGE = 600A die / �s IGBT part FWDi part Case to fin, conductive grease applied (Per 1/2 module) = 600A, Clamp diode part = 600A diF �1200A / �s, Clamp diode part Clamp diode part Case to fin, conductive grease applied (Per 1/2 module)

IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150�C. Pulse width and repetition rate should be such as to cause negligible temperature rise.


Features

Parameters


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