HomedatasheetCM600HB-90H

CM600HB-90H Datasheet

Type = Igbt Module ;; Voltage = 4500V ;; Current = 600A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves =
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Description

Features, Applications
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania (724) 925-7272

Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking

Applications: Traction Medium Voltage Drives High Voltage Power Supplies

Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. a 4500V (VCES), 600 Ampere Single IGBTMODTM Power Module.

Type CM Current Rating Amperes 600 VCES Volts 50) 90

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 925-7272 CM600HB-90H Single IGBTMODTM HVIGBT 600 Amperes/4500 Volts

Absolute Maximum Ratings, 25 �C unless otherwise specified

Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (VGE = 0V) Gate-Emitter Voltage (VCE = 0V) Collector Current (Tc = 25�C) Peak Collector Current (Pulse) Diode Forward Current** (Tc = 25�C) Diode Forward Surge Current** (Pulse) Maximum Collector Dissipation (Tc = 25�C, IGBT Part, Tj 125�C) Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Max. Mounting Torque M4 Auxiliary Terminal Screws Module Weight (Typical) Isolation Voltage (Charged Part to Baseplate, 60Hz 1 min.)

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Units �C Volts Amperes Watts in-lb kg Volts
Static Electrical Characteristics, 25 �C unless otherwise specified

Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 60mA, VCE = 600A, VGE = 600A, VGE = 125�C Total Gate Charge Emitter-Collector Voltage** VCC = 600A, VGE = 600A, VGE = 0V Min. Typ. Max. Units mA

* Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 925-7272 CM600HB-90H Single IGBTMODTM HVIGBT 600 Amperes/4500 Volts

Dynamic Electrical Characteristics, 25 �C unless otherwise specified

Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 15 Resistive Load Switching Operation = 600A, diE/dt IE =600A, diE/dt = -1200A/�s VGE = 0V, VCE = 10V Test Conditions Min. Typ. Max. Units nF �s

Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, 25 �C unless otherwise specified

Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance, Case to Fin Symbol Rth(j-c) Q Rth(j-c) D Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. � Typ. � 0.010 Max. 0.030 � Units K/W


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