HomedatasheetCM75TU-12F

CM75TU-12F Datasheet

High Power Switching Use
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Features, Applications

APPLICATION General purpose inverters & Servo controls, etc

Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short = 25�C Pulse = 25�C Pulse = 25�C Conditions Ratings Unit �C V Nm g

Main terminal to base plate, AC 1 min. Main Terminal M4 Mounting holes M5 Typical value

Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 7.5mA, VCE = 10V VGE = VCES, VCE = 75A, VGE 125 �C VCE = 10V VGE = 0V VCC = 75A, VGE = 15V VCC = 8.3, Inductive load switching operation = 75A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied*2 (1/6 module) Tc measured point is just under the chips Min. 5 8.3 Limits Typ. Max. Unit �A V

Contact thermal resistance Thermal resistance External gate resistance

Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150�C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone : If you use this value, Rth(f-a) should be measured just under the chips.

COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) = 25�C EMITTER CURRENT IE (A) 103

CAPACITANCE�VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF)

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